2SC2482(T6TOJS,F,M

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 300V 0.1A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 300V 0.1A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2482(T6TOJS,F,M

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Toshiba Semiconductor and Storage 2SC2482(T6TOJS,F,M	TO-92MOD	300 V	150 °C	100 mA	TO-226-3 TO-92-3 Long Body	30	50 MHz	NPN	Through Hole	900 mW	1 µA	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources