PJD2NA60_L2_00001

Obsolete

Panjit International Inc.

600V N-CHANNEL MOSFET

Search across all available documentation for this part.

Obsolete

Panjit International Inc.

600V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD2NA60_L2_00001

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.7 nC
Input Capacitance (Ciss) (Max) @ Vds	257 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	4.4 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	FET Type	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJD2NA60_L2_00001	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	2 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	34 W	N-Channel	Surface Mount	30 V	5.7 nC	TO-252AA	4 V	257 pF	4.4 Ohm

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General part information

N-Channel 600 V 2A (Ta) 34W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available