PJMP390N65EC_T0_00001

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Panjit International Inc.

650V SUPER JUNCTION MOSFET

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Panjit International Inc.

650V SUPER JUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMP390N65EC_T0_00001

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	726 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	87.5 W
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	TO-220AB-L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	FET Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)
Panjit International Inc. PJMP390N65EC_T0_00001	650 V	726 pF	19 nC	TO-220-3	Through Hole	N-Channel	87.5 W	TO-220AB-L	10 V	-55 °C	150 °C	10 A	4 V	MOSFET (Metal Oxide)	390 mOhm	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 10A (Tc) 87.5W (Tc) Through Hole TO-220AB-L

Technical documentation and resources