PJQ5846_R2_00001

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5846_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A, 9.5 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	32 W, 1.7 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology
Panjit International Inc. PJQ5846_R2_00001	Surface Mount	8-PowerTDFN	-55 °C	150 °C	1.7 W 32 W	10.5 mOhm	9.5 A 40 A	DFN5060B-8	22 nC	2 N-Channel (Dual)	40 V	2.5 V	1258 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 9.5A (Ta), 40A (Tc) 1.7W (Ta), 32W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources