DCG100X1200NA

Active

IXYS

DIODE MOD SIC 1200V 49A SOT227B

Search across all available documentation for this part.

Active

IXYS

DIODE MOD SIC 1200V 49A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	DCG100X1200NA

Current - Average Rectified (Io) (per Diode)	49 A
Current - Reverse Leakage @ Vr	500 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227B
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Diode Configuration	Technology	Voltage - Forward (Vf) (Max) @ If	Speed
IXYS DCG100X1200NA	1.2 kV	49 A	Chassis Mount	500 µA	SOT-227B	SOT-227-4 miniBLOC	-40 °C	175 ░C	0 ns	2 Independent	SiC (Silicon Carbide) Schottky	1.8 V	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 49A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

No documents available