SCS206AMC

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Rohm Semiconductor

DIODE SIL CARB 650V 6A TO220FM

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Rohm Semiconductor

DIODE SIL CARB 650V 6A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	SCS206AMC

Capacitance @ Vr, F	219 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	120 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220FM
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Speed	Package / Case	Mounting Type	Reverse Recovery Time (trr)
Rohm Semiconductor SCS206AMC	1.55 V	175 °C	6 A	TO-220FM	120 µA	650 V	219 pF	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-220-2 Full Pack	Through Hole	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 6A Through Hole TO-220FM

Technical documentation and resources