BUJ303B,127

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WeEn Semiconductors Co., Ltd

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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WeEn Semiconductors Co., Ltd

SOT78/SILICON DIFFUSED POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ303B,127

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	23
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Operating Temperature	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)
WeEn Semiconductors Co., Ltd BUJ303A,127	14	Through Hole	TO-220-3	150 °C	5 A	500 V	TO-220AB	1.5 V	100 W	100 µA	NPN
WeEn Semiconductors Co., Ltd BUJ303B,127	23	Through Hole	TO-220-3	150 °C	5 A		TO-220AB	1.5 V	100 W	100 µA	NPN	400 V
WeEn Semiconductors Co., Ltd BUJ303AX,127	10	Through Hole	TO-220-3 Full Pack Isolated Tab	150 °C	5 A	500 V	TO-220F	1.5 V	32 W	100 µA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB

Technical documentation and resources

No documents available