HS5M

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Taiwan Semiconductor Corporation

75NS, 5A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 5A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS5M

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V

Part	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation HS5M	75 ns	DO-214AB SMC	DO-214AB (SMC)	10 çA	150 °C	-55 °C	Surface Mount	200 mA 500 ns	1000 V	5 A	Standard	50 pF
Taiwan Semiconductor Corporation HS5M M6G	75 ns	DO-214AB SMC	DO-214AB (SMC)	10 çA	150 °C	-55 °C	Surface Mount	200 mA 500 ns	1000 V	5 A	Standard	50 pF	1.7 V
Taiwan Semiconductor Corporation HS5M R7G	75 ns	DO-214AB SMC	DO-214AB (SMC)	10 çA	150 °C	-55 °C	Surface Mount	200 mA 500 ns	1000 V	5 A	Standard	50 pF	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 5A Surface Mount DO-214AB (SMC)

Technical documentation and resources