XPH2R106NC,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 110A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 110A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPH2R106NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6900 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Qualification	Mounting Type	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology
Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ	6900 pF	60 V	Automotive	170 W 960 mW	N-Channel	2.1 mOhm	110 A	175 °C	8-SOP Advance (5x5)	104 nC	20 V	AEC-Q101	Surface Mount	2.5 V	8-PowerVDFN	MOSFET (Metal Oxide)

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General part information

N-Channel 60 V 110A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources