TPHR7904PB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPHR7904PB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	6650 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Rds On (Max) @ Id, Vgs [Max]	0.79 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage TPHR7904PB,L1XHQ	N-Channel	170 W 960 mW	20 V	Surface Mount	MOSFET (Metal Oxide)	8-SOP Advance (5x5)	150 A	3 V	6 V 10 V	40 V	85 nC	0.79 mOhm	6650 pF	8-PowerVDFN	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 150A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources