1SR139-400T-32

Obsolete

Rohm Semiconductor

DIODE GEN PURP 400V 1A MSR

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Obsolete

Rohm Semiconductor

DIODE GEN PURP 400V 1A MSR

Technical Specifications

Parameters and characteristics for this part

Specification	1SR139-400T-32

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	DO-41 Mini, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	MSR
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Speed
Rohm Semiconductor 1SR139-400T-31	10 µA	200 mA 500 ns	150 °C	1 A	1.1 V	Standard	MSR	400 V	Through Hole	DO-41 Mini Axial
Rohm Semiconductor 1SR139-400T-32	10 µA	200 mA	150 °C	1 A	1.1 V	Standard	MSR	400 V	Through Hole	DO-41 Mini Axial	Standard Recovery >500ns
Rohm Semiconductor 1SR139-600T-31	10 µA	200 mA	150 °C	1 A	1.1 V	Standard	MSR	600 V	Through Hole	DO-41 Mini Axial	Standard Recovery >500ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 1A Through Hole MSR

Technical documentation and resources