2SB1132T100R

Rohm Semiconductor

TRANS PNP 32V 1A MPT3

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Rohm Semiconductor

TRANS PNP 32V 1A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1132T100R

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Frequency - Transition	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type
Rohm Semiconductor 2SB1132T100Q	150 MHz	Surface Mount	TO-243AA	1 A	500 mV	2 W	150 °C	120	32 V	500 nA	PNP
Rohm Semiconductor 2SB1132T100R	150 MHz	Surface Mount	TO-243AA	1 A	500 mV	2 W	150 °C	180 hFE	32 V	500 nA	PNP

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General part information

Bipolar (BJT) Transistor PNP 32 V 1 A 150MHz 2 W Surface Mount MPT3

Technical documentation and resources