DPG10I200PA

Active

IXYS

DIODE GEN PURP 200V 10A TO220AC

Search across all available documentation for this part.

Active

IXYS

DIODE GEN PURP 200V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DPG10I200PA

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.27 V

Part	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
IXYS DPG10I200PM	35 ns	200 mA 500 ns	1 µA	Through Hole	TO-220-2 Full Pack Isolated Tab	200 V	175 ░C	-55 C	10 A	Standard	TO-220ACFP	1.27 V
IXYS DPG10I200PA	35 ns	200 mA 500 ns	1 µA	Through Hole	TO-220-2	200 V	175 ░C	-55 C	10 A	Standard	TO-220AC	1.27 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 10A Through Hole TO-220AC

Technical documentation and resources