G3R30MT12K

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GeneSiC Semiconductor

SIC MOSFET N-CH 90A TO247-4

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GeneSiC Semiconductor

SIC MOSFET N-CH 90A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	G3R30MT12K

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	3901 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-247-4
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	FET Type
GeneSiC Semiconductor G3R30MT12K	-55 °C	175 ░C	TO-247-4	15 V	90 A	2.69 V	155 nC	36 mOhm	15 V	3901 pF	1200 V	TO-247-4	400 W	Through Hole	N-Channel
GeneSiC Semiconductor G3R30MT12J	-55 °C	175 ░C	TO-263-7	15 V	96 A	2.69 V	155 nC	36 mOhm	15 V	3901 pF	1200 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	459 W	Surface Mount	N-Channel

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General part information

N-Channel 1200 V 90A (Tc) 400W (Tc) Through Hole TO-247-4

Technical documentation and resources