HT15G

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Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HT15G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Package / Case
Taiwan Semiconductor Corporation HT15G A1G	Standard	400 V	5 µA	15 pF	1.3 V	1 A	200 mA 500 ns	50 ns	150 °C	-55 °C	Through Hole	TS-1	T-18 Axial
Taiwan Semiconductor Corporation HT15G	Standard	400 V	5 µA	15 pF	1.3 V	1 A	200 mA 500 ns	50 ns	150 °C	-55 °C	Through Hole	TS-1	T-18 Axial

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Through Hole TS-1

Technical documentation and resources