2SC4132T100Q

Rohm Semiconductor

TRANS GP BJT NPN 120V 2A 4-PIN(3+TAB) MPT T/R

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Rohm Semiconductor

TRANS GP BJT NPN 120V 2A 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4132T100Q

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 hFE
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor 2SC4132T100Q	TO-243AA	150 °C	1 µA	Surface Mount	2 V	2 A	120 hFE	NPN	2 W	120 V
Rohm Semiconductor 2SC4132T100R	TO-243AA	150 °C	1 µA	Surface Mount	2 V	2 A	180 hFE	NPN	2 W	120 V
Rohm Semiconductor 2SC4132T100P	TO-243AA	150 °C	1 µA	Surface Mount	2 V	2 A	82 hFE	NPN	2 W	120 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High breakdown voltage. (BVCEO = 120V)

Low collector output capacitance (Typ. 20pF at VCB = 10V)

High transition frequency. (fT = 80MHz)

Technical documentation and resources