1SS416,L3M

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SOD923

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SOD923

Technical Specifications

Parameters and characteristics for this part

Specification	1SS416,L3M

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	50 çA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOD-923
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOD-923
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	500 mV

Part	Mounting Type	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Technology	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Speed	Speed
Toshiba Semiconductor and Storage 1SS416,L3M	Surface Mount	SOD-923	50 çA	30 V	125 °C	Schottky	SOD-923	100 mA	500 mV	15 pF	Any Speed	200 mA
Toshiba Semiconductor and Storage 1SS416CT,L3F	Surface Mount	SOD-882	50 çA	30 V	125 °C	Schottky	CST2	100 mA	500 mV	15 pF	Any Speed	200 mA

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General part information

Diode 30 V 100mA Surface Mount SOD-923

Technical documentation and resources