AOI2N60A

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI2N60A

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	295 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	4.7 Ohm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOI2N60A	MOSFET (Metal Oxide)	295 pF	150 °C	-50 °C	57 W	30 V	TO-251A	4.7 Ohm	4.5 V	2 A	TO-251-3 Stub Leads IPAK	N-Channel	Through Hole	11 nC	10 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3500	$ 0.25

General part information

N-Channel 600 V 2A (Tc) 57W (Tc) Through Hole TO-251A

Technical documentation and resources