HERAF1004G C0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 10A ITO220AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 10A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	HERAF1004G C0G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Package / Case	Mounting Type
Taiwan Semiconductor Corporation HERAF1004G C0G	150 °C	-55 °C	50 ns	10 µA	300 V	ITO-220AC	80 pF	Standard	10 A	1 V	200 mA 500 ns	TO-220-2 Full Pack	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 300 V 10A Through Hole ITO-220AC

Technical documentation and resources

No documents available