SCS320AHGC9

LTB

Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220ACP

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LTB

Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS320AHGC9

Capacitance @ Vr, F	1000 pF
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Mounting Type	Speed	Capacitance @ Vr, F	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case
Rohm Semiconductor SCS320AHGC9	Through Hole	No Recovery Time	1000 pF	TO-220ACP	SiC (Silicon Carbide) Schottky	650 V	175 °C	100 µA	0 ns	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 5.10

General part information

Diode 650 V 20A Through Hole TO-220ACP

Technical documentation and resources

No documents available