KBP206

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 2A KBP

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 2A KBP

Technical Specifications

Parameters and characteristics for this part

Specification	KBP206

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-SIP, KBP
Supplier Device Package	KBP
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Voltage - Peak Reverse (Max) [Max]	Technology	Diode Type	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Average Rectified (Io)
GeneSiC Semiconductor KBP206	600 V	Standard	Single Phase	Through Hole	1.1 V	10 µA	KBP	4-SIP KBP	150 °C	-50 °C	2 A
GeneSiC Semiconductor KBP206G	600 V	Standard	Single Phase	Through Hole	1.1 V	10 µA	KBP	4-SIP KBP	150 °C	-55 °C	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole KBP

Technical documentation and resources