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LTC4449EDCB#TRMPBF - TE CONNECTIVITY TSYS03

LTC4449EDCB#TRMPBF

Active
Analog Devices

GATE DRIVER, 2 CHANNELS, HIGH SIDE OR LOW SIDE, MOSFET, 8 PINS, DFN-EP

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LTC4449EDCB#TRMPBF - TE CONNECTIVITY TSYS03

LTC4449EDCB#TRMPBF

Active
Analog Devices

GATE DRIVER, 2 CHANNELS, HIGH SIDE OR LOW SIDE, MOSFET, 8 PINS, DFN-EP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLTC4449EDCB#TRMPBF
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]4.5 A
Current - Peak Output (Source, Sink) [custom]3.2 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]42 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]6.5 V
Logic Voltage - VIL, VIH [custom]3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-WFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]7 ns
Rise / Fall Time (Typ) [custom]8 ns
Supplier Device Package8-DFN (2x3)
Voltage - Supply [Max]6.5 V
Voltage - Supply [Min]4 V

LTC4449 Series

High Speed Synchronous N-Channel MOSFET Driver

PartLogic Voltage - VIL, VIH [custom]Logic Voltage - VIL, VIH [custom]Driven ConfigurationMounting TypeVoltage - Supply [Min]Voltage - Supply [Max]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]High Side Voltage - Max (Bootstrap) [Max]Package / CaseGate TypeChannel TypeSupplier Device PackageInput TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Number of DriversOperating Temperature [Min]Operating Temperature [Max]
Analog Devices
6.5 V
3 V
Half-Bridge
Surface Mount
4 V
6.5 V
4.5 A
3.2 A
42 V
8-WFDFN Exposed Pad
N-Channel MOSFET
Synchronous
8-DFN (2x3)
Non-Inverting
7 ns
8 ns
2
-40 °C
125 ¯C
Analog Devices
6.5 V
3 V
Half-Bridge
Surface Mount
4 V
6.5 V
4.5 A
3.2 A
42 V
8-WFDFN Exposed Pad
N-Channel MOSFET
Synchronous
8-DFN (2x3)
Non-Inverting
7 ns
8 ns
2
-40 °C
125 ¯C
Analog Devices
6.5 V
3 V
Half-Bridge
Surface Mount
4 V
6.5 V
4.5 A
3.2 A
42 V
8-WFDFN Exposed Pad
N-Channel MOSFET
Synchronous
8-DFN (2x3)
Non-Inverting
7 ns
8 ns
2
-40 °C
125 ¯C
Analog Devices
6.5 V
3 V
Half-Bridge
Surface Mount
4 V
6.5 V
4.5 A
3.2 A
42 V
8-WFDFN Exposed Pad
N-Channel MOSFET
Synchronous
8-DFN (2x3)
Non-Inverting
7 ns
8 ns
2
-40 °C
125 ¯C
Analog Devices
6.5 V
3 V
Half-Bridge
Surface Mount
4 V
6.5 V
4.5 A
3.2 A
42 V
8-WFDFN Exposed Pad
N-Channel MOSFET
Synchronous
8-DFN (2x3)
Non-Inverting
7 ns
8 ns
2
-40 °C
125 ¯C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.41
10$ 3.62
25$ 3.16
100$ 2.64
250$ 2.39
Digi-Reel® 1$ 5.41
10$ 3.62
25$ 3.16
100$ 2.64
250$ 2.39
Tape & Reel (TR) 500$ 2.23
1000$ 2.10
1500$ 2.04
2500$ 1.97
3500$ 1.93
5000$ 1.91

Description

General part information

LTC4449 Series

The LTC4449 is a high frequency gate driver that is designed to drive two N-Channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail driver capability reduces switching losses in MOSFETs with high gate capacitance.The LTC4449 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4449 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which functions at up to 42V above ground.The LTC4449 contains undervoltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an undervoltage condition is present. An adaptive shoot-through protection feature is also built-in to prevent the power loss resulting from MOSFET cross-conduction current.The LTC4449 is available in the 2mm × 3mm DFN package.ApplicationsDistributed Power ArchitecturesHigh Density Power Modules