AOI5N40

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 400V 4.2A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 400V 4.2A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI5N40

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AOI5N40	78 W	400 V	Through Hole	30 V	150 °C	-50 °C	4.5 V	TO-251-3 Stub Leads IPAK	TO-251A	MOSFET (Metal Oxide)	N-Channel	400 pF	8.5 nC	10 V	1.6 Ohm	4.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3500	$ 0.35