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MT47H32M16NF-25E AAT:H - 84-FBGA

MT47H32M16NF-25E AAT:H

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Micron Technology Inc.

DRAM CHIP DDR2 SDRAM 512MBIT 32MX16 1.8V AUTOMOTIVE AEC-Q100 84-PIN FBGA TRAY

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MT47H32M16NF-25E AAT:H - 84-FBGA

MT47H32M16NF-25E AAT:H

Active
Micron Technology Inc.

DRAM CHIP DDR2 SDRAM 512MBIT 32MX16 1.8V AUTOMOTIVE AEC-Q100 84-PIN FBGA TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT47H32M16NF-25E AAT:H
Access Time400 ps
Clock Frequency400 MHz
GradeAutomotive
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization32M x 16
Memory Size64 MB
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case84-TFBGA
QualificationAEC-Q100
Supplier Device Package84-FBGA (8x12.5)
TechnologySDRAM - DDR2
Voltage - Supply [Max]1.9 V
Voltage - Supply [Min]1.7 V
Write Cycle Time - Word, Page15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 5.84
10$ 5.33
25$ 5.23
50$ 5.19
100$ 4.66
250$ 4.64
500$ 4.35
1368$ 4.17

Description

General part information

MT47H32M16 Series

Operating voltage range is 1.8V (VDD CMOS)

32Meg x 16 configuration, automotive qualified, 8D response time

Packaging style is 84-ball 8mm x 12.5mm FBGA

Documents

Technical documentation and resources

No documents available