SJPX-H3V

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Sanken Electric USA Inc.

DIODE GEN PURP 300V 2A SJP

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Sanken Electric USA Inc.

DIODE GEN PURP 300V 2A SJP

Technical Specifications

Parameters and characteristics for this part

Specification	SJPX-H3V

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	2-SMD, J-Lead
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	SJP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Reverse Recovery Time (trr)
Sanken Electric USA Inc. SJPX-H3V	1.3 V	Surface Mount	150 °C	-40 °C	200 mA 500 ns	SJP	300 V	2-SMD J-Lead	50 µA	Standard	2 A	30 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V 2A Surface Mount SJP

Technical documentation and resources