TRA2525

Obsolete

ON Semiconductor

DIODE GP 250V 25A MICRODE BUTTON

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Obsolete

ON Semiconductor

DIODE GP 250V 25A MICRODE BUTTON

Technical Specifications

Parameters and characteristics for this part

Specification	TRA2525

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Microde Button
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Microde Button
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	250 V
Voltage - Forward (Vf) (Max) @ If	1.18 V

Medium-Current Silicon Rectifier

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Technology
ON Semiconductor TRA2525	250 V	Microde Button	Surface Mount	1.18 V	Microde Button	25 A	10 µA	175 ░C	-65 C	Standard Recovery >500ns	200 mA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Compact, highly efficient silicon rectifiers for medium-current applications requiring: