PJD16P06A-AU_L2_000A1

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD16P06A-AU_L2_000A1

Current - Continuous Drain (Id) @ 25°C	16 A, 5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1256 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Technology	Grade	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJD16P04-AU_L2_000A1	TO-252AA	MOSFET (Metal Oxide)	Automotive	P-Channel	45 mOhm	20 V	40 V	-55 °C	150 °C	AEC-Q101	Surface Mount	5 A 16 A	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 W 22 W	929 pF	4.5 V 10 V	8.3 nC
Panjit International Inc. PJD16P06A-AU_L2_000A1	TO-252AA	MOSFET (Metal Oxide)	Automotive	P-Channel	48 mOhm	20 V	60 V	-55 °C	150 °C	AEC-Q101	Surface Mount	5 A 16 A	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 W 25 W	1256 pF	4.5 V 10 V	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 5A (Ta), 16A (Tc) 2W (Ta), 25W (Tc) Surface Mount TO-252AA

Technical documentation and resources