WNSC051200Q

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARB 1.2KV 5A TO220AC

Search across all available documentation for this part.

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARB 1.2KV 5A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC051200Q

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Operating Temperature - Junction [Max]	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)
WeEn Semiconductors Co., Ltd WNSC021200Q	175 °C	No Recovery Time	TO-220AC	1.6 V	1.2 kV	0 ns	20 µA	Through Hole	SiC (Silicon Carbide) Schottky	109 pF	TO-220-2	2 A
WeEn Semiconductors Co., Ltd WNSC051200Q	175 °C	No Recovery Time	TO-220AC	1.6 V	1.2 kV	0 ns	50 µA	Through Hole	SiC (Silicon Carbide) Schottky	250 pF	TO-220-2	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 5A Through Hole TO-220AC

Technical documentation and resources

No documents available