FMP26-02P

Obsolete

IXYS

MOSFET N/P-CH 200V 26A I4-PAC

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Obsolete

IXYS

MOSFET N/P-CH 200V 26A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMP26-02P

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	26 A
Current - Continuous Drain (Id) @ 25°C [Min]	17 A
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2720 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power - Max [Max]	125 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

Part	Power - Max [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Technology	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id
IXYS FMP26-02P	125 W	ISOPLUS i4-PAC™	i4-Pac™-5	200 V	-55 °C	150 °C	17 A	26 A	MOSFET (Metal Oxide)	N and P-Channel	2720 pF	70 nC	60 mOhm	Through Hole	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 200V 26A, 17A 125W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available