RQ3E180BNTB1
ActiveRohm Semiconductor
NCH 30V 39A MIDDLE POWER MOSFET:
Deep-Dive with AI
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RQ3E180BNTB1
ActiveRohm Semiconductor
NCH 30V 39A MIDDLE POWER MOSFET:
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3E180BNTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39 A, 18 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 20 W, 2 W |
| Rds On (Max) @ Id, Vgs [Max] | 3.9 mOhm |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.00 | |
| 10 | $ 1.29 | |||
| 100 | $ 0.92 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.74 | |||
| Digi-Reel® | 1 | $ 2.00 | ||
| 10 | $ 1.29 | |||
| 100 | $ 0.92 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.74 | |||
| Tape & Reel (TR) | 3000 | $ 0.62 | ||
Description
General part information
RQ3E180AJ Series
RQ3E180BN is low on-resistance and high power package MOSFET for switching application.
Documents
Technical documentation and resources