TT8J2TR

NRND

Rohm Semiconductor

MOSFET 2P-CH 30V 2.5A 8TSST

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NRND

Rohm Semiconductor

MOSFET 2P-CH 30V 2.5A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	TT8J2TR

Configuration	2 P-Channel
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	460 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]
Rohm Semiconductor TT8J2TR	MOSFET (Metal Oxide)	Surface Mount	4.8 nC	84 mOhm	2 P-Channel	150 °C	2.5 V	30 V	8-TSST	Logic Level Gate	460 pF	1.25 W

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General part information

Mosfet Array 30V 2.5A 1.25W Surface Mount 8-TSST

Technical documentation and resources