VWM200-01P

Obsolete

IXYS

MOSFET 6N-CH 100V 210A V2-PAK

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Obsolete

IXYS

MOSFET 6N-CH 100V 210A V2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VWM200-01P

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	210 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	430 nC
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	V2-PAK
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	V2-PAK
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)
IXYS VWM200-01P	-40 C	175 °C	5.2 mOhm	210 A	MOSFET (Metal Oxide)	430 nC	4 V	6 N-Channel (3-Phase Bridge)	V2-PAK	Chassis Mount	V2-PAK	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 100V 210A Chassis Mount V2-PAK

Technical documentation and resources