IXFN72N55Q2

Obsolete

IXYS

MOSFET N-CH 550V 72A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 550V 72A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN72N55Q2

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	258 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFN72N55Q2	258 nC	72 mOhm	N-Channel	890 W	SOT-227-4 miniBLOC	10 V	Chassis Mount	5 V	10500 pF	SOT-227B	550 V	30 V	MOSFET (Metal Oxide)	72 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 72A (Tc) 890W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available