FMD80-0045PS

Obsolete

IXYS

MOSFET N-CH 55V 150A I4PAC

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Obsolete

IXYS

MOSFET N-CH 55V 150A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMD80-0045PS

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Technology	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
IXYS FMD80-0045PS	86 nC	i4-Pac™-5	Through Hole	MOSFET (Metal Oxide)	ISOPLUS i4-PAC™	N-Channel	4.9 mOhm	-55 °C	175 ░C	150 A	20 V	55 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 150A (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available