SFU9220TU_F080

Obsolete

ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

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Obsolete

ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SFU9220TU_F080

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Through Hole
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	30 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)
ON Semiconductor SFU9220TU_F080	10 V	Through Hole	3.1 A	IPAK TO-251-3 Short Leads TO-251AA	4 V	200 V	IPAK	19 nC	30 V	540 pF	MOSFET (Metal Oxide)	1.5 Ohm	P-Channel	2.5 W 30 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 200 V 3.1A (Tc) 2.5W (Ta), 30W (Tc) Through Hole IPAK

Technical documentation and resources