AOI1N60

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 1.3A TO251A

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 1.3A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI1N60

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	9 Ohm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Technology
Alpha & Omega Semiconductor Inc. AOI1N60	8 nC	4.5 V	1.3 A	9 Ohm	TO-251-3 Stub Leads IPAK	150 °C	-50 °C	160 pF	10 V	600 V	Through Hole	N-Channel	45 W	TO-251A	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$