2SB1457(T6CANO,F,M

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 2A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 2A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1457(T6CANO,F,M

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Supplier Device Package	Transistor Type	Mounting Type
Toshiba Semiconductor and Storage 2SB1457(T6DW,F,M)	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole
Toshiba Semiconductor and Storage 2SB1457(T6CANO,F,M	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole
Toshiba Semiconductor and Storage 2SB1457(T6CNO,A,F)	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 2 A 50MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources