70T659S10DR

Obsolete

Renesas Electronics Corporation

128K X 36 ASYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/OS

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet 70T651/9 Data Sheet

70T659S10DR

Obsolete

Renesas Electronics Corporation

128K X 36 ASYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/OS

Deep-Dive with AI

DocumentsDatasheet 70T651/9 Data Sheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	70T659S10DR

Access Time	10 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 36
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	208-BFQFP
Supplier Device Package	208-PQFP (28x28)
Technology	SRAM - Dual Port, Asynchronous
Voltage - Supply [Max]	2.6 V
Voltage - Supply [Min]	2.4 V
Write Cycle Time - Word, Page	10 ns

70T659 Series

128K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/Os

Part	Technology	Mounting Type	Package / Case	Memory Format	Memory Interface	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Access Time	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Memory Type
Renesas Electronics Corporation 70T659S10BFI	SRAM - Dual Port Asynchronous	Surface Mount	208-LFBGA	SRAM	Parallel	10 ns	85 °C	-40 °C	4.5 Mbit	10 ns	128K x 36	2.6 V	2.4 V	208-CABGA (15x15)	Volatile
Renesas Electronics Corporation 70T659S12BCI	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	12 ns	85 °C	-40 °C	4.5 Mbit	12 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile
Renesas Electronics Corporation 70T659S10BC8	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	10 ns	70 °C	0 °C	4.5 Mbit	10 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile
Renesas Electronics Corporation 70T659S10BCI	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	10 ns	85 °C	-40 °C	4.5 Mbit	10 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile
Renesas Electronics Corporation 70T659S10DR	SRAM - Dual Port Asynchronous	Surface Mount	208-BFQFP	SRAM	Parallel	10 ns	70 °C	0 °C	4.5 Mbit	10 ns	128K x 36	2.6 V	2.4 V	208-PQFP (28x28)	Volatile
Renesas Electronics Corporation 70T659S12BCI8	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	12 ns	85 °C	-40 °C	4.5 Mbit	12 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile
Renesas Electronics Corporation 70T659S15BC8	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	15 ns	70 °C	0 °C	4.5 Mbit	15 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile
Renesas Electronics Corporation 70T659S12DR	SRAM - Dual Port Asynchronous	Surface Mount	208-BFQFP	SRAM	Parallel	12 ns	70 °C	0 °C	4.5 Mbit	12 ns	128K x 36	2.6 V	2.4 V	208-PQFP (28x28)	Volatile
Renesas Electronics Corporation 70T659S12BFI8	SRAM - Dual Port Asynchronous	Surface Mount	208-LFBGA	SRAM	Parallel	12 ns	85 °C	-40 °C	4.5 Mbit	12 ns	128K x 36	2.6 V	2.4 V	208-CABGA (15x15)	Volatile
Renesas Electronics Corporation 70T659S12BC8	SRAM - Dual Port Asynchronous	Surface Mount	256-LBGA	SRAM	Parallel	12 ns	70 °C	0 °C	4.5 Mbit	12 ns	128K x 36	2.6 V	2.4 V	256-CABGA (17x17)	Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

70T659 Series

The 70T659 is a high-speed 128K x 36 asynchronous dual-port static RAM designed to be used as a stand-alone dual-port RAM or as a combination Master/Slave dual-port RAM for 72-bit or more word systems which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power-down feature controlled by the Chip Enables (either CE0 or CE1) permits the on-chip circuitry of each port to enter a very low standby power mode.