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2N3442G - onsemi-MJ15016G GP BJT Trans GP BJT PNP 120V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray

2N3442G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 140V 10A 117000MW 3-PIN(2+TAB) TO-3 TRAY

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Search across all available documentation for this part.

2N3442G - onsemi-MJ15016G GP BJT Trans GP BJT PNP 120V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray

2N3442G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 140V 10A 117000MW 3-PIN(2+TAB) TO-3 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3442G
Current - Collector Cutoff (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce20
Frequency - Transition80 kHz
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Power - Max [Max]117 W
Supplier Device PackageTO-204
Supplier Device PackageTO-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic5 V
Voltage - Collector Emitter Breakdown (Max)140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

2N3442 Series

The 10 A, 140 V NPN Bipolar Power Transistor is designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

Documents

Technical documentation and resources