TN6717A

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ON Semiconductor

TRANS NPN 80V 1.2A TO226-3

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ON Semiconductor

TRANS NPN 80V 1.2A TO226-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN6717A

Current - Collector (Ic) (Max) [Max]	1.2 A
Current - Collector Cutoff (Max) [Max]	100 nA
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-226-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor TN6717A	TO-226-3	1 W	80 V	-55 °C	150 °C	TO-226-3 TO-92-3	100 nA	NPN	Through Hole	1.2 A	350 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 1.2 A 1 W Through Hole TO-226-3

Technical documentation and resources

No documents available