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SCT4013DW7TL - ROHM SCT3080KW7TL

SCT4013DW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 98 A, 750 V, 0.013 OHM, TO-263

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN5kW High-Efficiency Fan-less Inverter+49
SCT4013DW7TL - ROHM SCT3080KW7TL

SCT4013DW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 98 A, 750 V, 0.013 OHM, TO-263

Deep-Dive with AI

DocumentsTechnical Data Sheet EN5kW High-Efficiency Fan-less Inverter+49

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4013DW7TL
Current - Continuous Drain (Id) @ 25°C98 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]170 nC
Input Capacitance (Ciss) (Max) @ Vds4580 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]267 W
Rds On (Max) @ Id, Vgs16.9 mOhm
Supplier Device PackageTO-263-7L
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 36.33
10$ 32.28
100$ 28.23
Digi-Reel® 1$ 36.33
10$ 32.28
100$ 28.23
Tape & Reel (TR) 1000$ 23.71
NewarkEach (Supplied on Cut Tape) 1$ 29.02
10$ 23.89
25$ 23.10
50$ 22.85

Description

General part information

SCT4013DW7 Series

SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Judgment Criteria of Thermal Evaluation

Thermal Design

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Application Benefits of Using 4<sup>th</sup> Generation SiC MOSFETs

Technical Article

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

TO-263-7L Inner Structure

Package Information

Two-Resistor Model for Thermal Simulation

Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Anti-Whisker formation

Package Information

TO-263-7L Package Dimensions

Package Information

TO-263-7L Explanation for Marking

Package Information

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

About Flammability of Materials

Environmental Data

Condition of Soldering

Package Information

How to Use PLECS Models

Technical Article

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

PCB Layout Thermal Design Guide

Thermal Design

Moisture Sensitivity Level

Package Information

About Export Administration Regulations (EAR)

Export Information

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

SiC MOSFET Layout Design Considerations

Technical Article

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Improvement of switching loss by driver source

Technical Article

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

SCT4013DW7 Data Sheet

Data Sheet

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

What Is Thermal Design

Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Types and Features of Transistors

Application Note

How to Use LTspice&reg; Models: Tips for Improving Convergence

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper