
TIP35A
ObsoleteON Semiconductor
25 A, 60 V NPN BIPOLAR POWER TRANSISTOR
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TIP35A
ObsoleteON Semiconductor
25 A, 60 V NPN BIPOLAR POWER TRANSISTOR
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Technical Specifications
Parameters and characteristics for this part
| Specification | TIP35A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 hFE |
| Frequency - Transition | 3 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-218-3 |
| Supplier Device Package | TO-218 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 325 | $ 0.92 | |
Description
General part information
TIP35A Series
The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. The TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) are complementary devices.
Documents
Technical documentation and resources