PJX8839_R1_00001

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8839_R1_00001

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	51 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Package / Case	Configuration
Panjit International Inc. PJX8839_R1_00001	60 V	4 Ohm	MOSFET (Metal Oxide)	SOT-563	200 mA	-55 °C	150 °C	51 pF	Surface Mount	2.5 V	1.1 nC	300 mW	SOT-563 SOT-666	2 P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 200mA (Ta) 300mW (Ta) Surface Mount SOT-563

Technical documentation and resources