US1J R3G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1J R3G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification
Taiwan Semiconductor Corporation US1J R3G	Surface Mount	10 pF	75 ns	1.7 V	Standard	1 A	5 µA	DO-214AC (SMA)	200 mA 500 ns	DO-214AC SMA	600 V	150 °C	-55 °C
Taiwan Semiconductor Corporation US1JH	Surface Mount	10 pF	75 ns	1.7 V	Standard	1 A	5 µA	DO-214AC (SMA)	200 mA 500 ns	DO-214AC SMA	600 V	150 °C	-55 °C	Automotive	AEC-Q101
Taiwan Semiconductor Corporation US1JHR3G	Surface Mount	10 pF	75 ns	1.7 V	Standard	1 A	5 µA	DO-214AC (SMA)	200 mA 500 ns	DO-214AC SMA	600 V	150 °C	-55 °C	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources