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ES2C M4G - DO214

ES2C M4G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AA

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ES2C M4G - DO214

ES2C M4G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AA

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Technical Specifications

Parameters and characteristics for this part

SpecificationES2C M4G
Capacitance @ Vr, F25 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSMB, DO-214AA
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageSMB
Supplier Device PackageDO-214AA
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

ES2C Series

Diode 150 V 2A Surface Mount DO-214AA (SMB)

Documents

Technical documentation and resources

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