4N26(SHORT,F)

Obsolete

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

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Obsolete

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

Technical Specifications

Parameters and characteristics for this part

Specification	4N26(SHORT,F)

Current - DC Forward (If) (Max) [Max]	80 mA
Current - Output / Channel	100 mA
Current Transfer Ratio (Min) [Min]	20 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	2 µs
Rise / Fall Time (Typ) [custom]	200 µs
Supplier Device Package	6-DIP
Vce Saturation (Max) [Max]	500 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Isolation	2500 Vrms
Voltage - Output (Max) [Max]	30 V

Part	Voltage - Forward (Vf) (Typ)	Package / Case	Package / Case	Package / Case	Voltage - Output (Max) [Max]	Supplier Device Package	Input Type	Current - Output / Channel	Vce Saturation (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Channels	Current - DC Forward (If) (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Isolation	Current Transfer Ratio (Min) [Min]
Toshiba Semiconductor and Storage 4N26(SHORT,F)	1.15 V	6-DIP	0.3 in	7.62 mm	30 V	6-DIP	DC	100 mA	500 mV	2 µs	200 µs	1	80 mA	Through Hole	100 °C	-55 °C	2500 Vrms	20 %

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Optoisolator Transistor with Base Output 2500Vrms 1 Channel 6-DIP

Technical documentation and resources