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2N6045G - TO-220-3

2N6045G

Active
ON Semiconductor

8.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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2N6045G - TO-220-3

2N6045G

Active
ON Semiconductor

8.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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Technical Specifications

Parameters and characteristics for this part

Specification2N6045G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]75 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.60
10$ 1.01
100$ 0.68
500$ 0.53
1000$ 0.49
2000$ 0.45
5000$ 0.40
10000$ 0.38
ON SemiconductorN/A 1$ 0.41

Description

General part information

2N6045 Series

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.