NP80N03MDE-S18-AY

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Conec

80A, 30V, 0.011OHM, N-CHANNEL ,

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Conec

80A, 30V, 0.011OHM, N-CHANNEL ,

Technical Specifications

Parameters and characteristics for this part

Specification	NP80N03MDE-S18-AY

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max)	1.8 W
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	MP-25K
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Conec NP80N03MDE-S18-AY	7 mOhm	TO-220-3	175 °C	Through Hole	1.8 W	120 W	72 nC	N-Channel	4.5 V 10 V	30 V	MOSFET (Metal Oxide)	MP-25K	2.5 V	3900 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	151	$ 2.00

General part information

N-Channel 30 V 80A (Tc) 1.8W (Ta), 120W (Tc) Through Hole MP-25K

Technical documentation and resources

No documents available