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ZXMC3AMCTA - Package Image for V-DFN3020-8

ZXMC3AMCTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.12OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, DFN3020B-8, 8 PIN

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ZXMC3AMCTA - Package Image for V-DFN3020-8

ZXMC3AMCTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.12OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, DFN3020B-8, 8 PIN

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Technical Specifications

Parameters and characteristics for this part

SpecificationZXMC3AMCTA
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C2.9 A, 2.1 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]3.9 nC
Input Capacitance (Ciss) (Max) @ Vds190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-WDFN Exposed Pad
Power - Max [Max]1.7 W
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackageDFN3020B-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.97
10$ 0.80
100$ 0.62
500$ 0.52
1000$ 0.43
Digi-Reel® 1$ 0.97
10$ 0.80
100$ 0.62
500$ 0.52
1000$ 0.43
Tape & Reel (TR) 3000$ 0.38

Description

General part information

ZXMC3A17DN8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.