PJMF380N65E1_T0_00001

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Panjit International Inc.

650V/ 380MOHM SUPER JUNCTION EAS

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Active

Panjit International Inc.

650V/ 380MOHM SUPER JUNCTION EAS

Technical Specifications

Parameters and characteristics for this part

Specification	PJMF380N65E1_T0_00001

Current - Continuous Drain (Id) @ 25°C	10.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	769 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	ITO-220AB-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Technology	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJMF380N65E1_T0_00001	ITO-220AB-F	769 pF	22 nC	10.6 A	30 V	650 V	TO-220-3 Full Pack Isolated Tab	N-Channel	MOSFET (Metal Oxide)	Through Hole	33 W	4 V	10 V	-55 °C	150 °C	380 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 10.6A (Tc) 33W (Tc) Through Hole ITO-220AB-F

Technical documentation and resources